TM:ZnSe/S Series

Cr2+:ZnSe and Cr2+:ZnS Laser Active Materials

The unique combination of available pump sources (Er-fiber, Tm fiber, telecom or InP diodes, Er:YAG/YLF; Tm: YAG/YLF), technological (low cost ceramic material), optical and spectroscopic characteristics (ultrbroadband gain bandwidth, high στ product and high absorption coefficients) make them the gain materials of choice when one needs a compact system with continuous tunability at 300 K over 1.9-3.3 μm, output powers up to 13 W, and high (up to 70%) conversion efficiency.

Cr2+:ZnSe/S lasers are promising for spectroscopy, sensing, medical and defense related applications, as well as for seeding or pumping middle-infrared optical parametric oscillators.

IPG’s fabrication process allows low cost mass production of a large variety of diffusion-doped Cr2+:ZnSe/ZnS crystals with low losses, uniform distribution of chromium, good reproducibility and reliability.

Uniformly-doped Cr:ZnSe Crystals

Uniformly-doped 5 x 5 x 20 mm
Cr:ZnSe Crystals

 TM:ZnSe/S Series Datasheet

Laser Characteristics Output Parameter

CW, Output Power, W    12
CW, Tuning Range, nm 1950-3300
CW, Efficiency, % 60
CW, Microchip, Output Power, W 3
CW, Hot-Pressed Ceramic Laser, W 0.25
CW, Multiline Operation 40 lines over 2.4-2.6 µm
Pulsed Microchip, Energy, mJ 1
Gain-switched, Energy, mJ 20 @ 15 ns
Mode-locked, Duration, fs 500 @ 50 mW

 

Fe2+:ZnSe Laser Active Materials

Fe²+:ZnSe crystals are ideal gain materials for room temperature gain-switched lasers tunable over 3.9-5.1 µm spectral range.

These lasers are prommising for spectroscopic, sensing, medical and defense related applications, as well as for seeding or pumping middle-infrared optical parametric oscillators.

IPG’s fabrication process allows low cost mass production of a large variety of diffusion-doped Fe²+:ZnSe/ZnS crystals with low losses, uniform distribution of iron, good reproducibility and reliability.

TM:ZnSe/S Crystals

 TM:ZnSe/S Series Datasheet

State-of-the-art of Fe:ZnSe Laser Characteristics

Laser Characteristics

Output Parameter

Pulsed @ 85 K, Energy, mJ 187
Pulsed, Efficiency, % 43
Microchip gain-switched @ 300 K, Energy, µJ 1 @ 5 ns
Gain-switched @ 300 K, Energy, mJ 5 @ 20 ns
Pulsed, Efficiency @ 300 K, % 20
Gain-switched @ 300 K, Tun. Range, nm 3950-5050

 

Contact IPG Photonics for more information